Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

被引：10
|
作者：
Yong, JCL [1 ]
Rorison, JM [1 ]
White, IH [1 ]
机构：
[1] Univ Bristol, Ctr Commun Res, Bristol BS8 1TR, Avon, England
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期
关键词：
D O I：
10.1063/1.1390482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 mum applications. (C) 2001 American Institute of Physics.
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收藏
页码：1085 / 1087
页数：3
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