Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

被引：0

作者：

Gönül, B ^{[1
]}

Oduncuoglu, M ^{[1
]}

Dindaroglu, S ^{[1
]}

Yagdiran, B ^{[1
]}

机构：

[1] Gaziantep Univ, Dept Engn Phys, TR-27310 Gaziantep, Turkey

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 mum and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.

引用

页码：163 / 169

页数：7

共 50 条

[41] Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
Hadjaj, F.
Belghachi, A.
Helmaoui, A.
[J]. INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS, 2018, 11 (01): : 61 - 70
[42] Optical gain of 1.3 μm GaAsSbN/GaAs quantum well lasers
Park, S. H.
[J]. IET OPTOELECTRONICS, 2007, 1 (01) : 42 - 46
[43] INFLUENCE OF SATURATION OF THE GAIN ON THE THRESHOLD CHARACTERISTICS OF QUANTUM-WELL INGAASP GAAS HETEROLASERS
GARBUZOV, DZ
TIKUNOV, AV
ZHIGULIN, SN
SOKOLOVA, ZN
KHALFIN, VB
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 653 - 656
[44] Optical characterization of GaInNAs/GaAs quantum well structures
Tanaka, S
Takahashi, M
Moto, A
Tanabe, T
Takagishi, S
Karatani, K
Nakanishi, T
Nakayama, M
[J]. COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 633 - 638
[45] The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
Telegin, K. Yu.
Ladugin, M. A.
Andreev, A. Yu.
Yarotskaya, I. V.
Volkov, N. A.
Padalitsa, A. A.
Lobintsov, A. V.
Aparnikov, A. N.
Sapozhnikov, S. M.
Marmalyuk, A. A.
[J]. QUANTUM ELECTRONICS, 2020, 50 (05) : 489 - 492
[46] GaAs/GaInNAs quantum well and superlattice solar cell
Courel, Maykel
Rimada, Julio C.
Hernandez, Luis
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (07)
[47] Optical properties of GaInNAs/GaAs quantum well structures
Zhao, Q. X.
Willander, M.
Wang, S. M.
Wei, Y. Q.
Gu, Q. F.
Sadeghi, M.
Larsson, A.
[J]. THIN SOLID FILMS, 2007, 515 (10) : 4423 - 4426
[48] Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well
Khee, NT
Fatt, YS
Fan, WJ
[J]. PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2004, 799 : 39 - 43
[49] Gain characteristics of asymmetric multiple quantum-well lasers
Wang, HL
Bruce, DM
Cassidy, DT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (5-6) : 464 - 470
[50] Gain characteristics of InGaN/GaN quantum well diode lasers
Song, YK
Kuball, M
Nurmikko, AV
Bulman, GE
Doverspike, K
Shepperd, ST
Weeks, TW
Leonard, M
Kong, HS
Dieringer, H
Edmond, J
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (12) : 1418 - 1420

← 1 2 3 4 5 →