Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

被引：39
|
作者：
Hader, J
Koch, SW
Moloney, JV
O'Reilly, EP
机构：
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[4] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期
关键词：
D O I：
10.1063/1.126749
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dependence of the gain and absorption in GaNAs/GaAs quantum well lasers on the valence-band offset is investigated. The calculated absorption strength, gain amplitudes, and gain bandwidth are found to depend crucially on the value of this offset. The shift of the peak gain transition energy with carrier density is shown to depend strongly on the magnitude of the offset, providing what should be a useful means to determine the offset experimentally. (C) 2000 American Institute of Physics. [S0003-6951(00)04225-X].
引用
收藏
页码：3685 / 3687
页数：3
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