MEASUREMENT OF THE GAAS/AIAS VALENCE-BAND OFFSET FROM A SINGLE-QUANTUM-WELL NEAR THE GAMMA-X CROSSOVER

被引：14
|
作者：
YEH, CN
MCNEILL, LE
BLUE, LJ
DANIELSRACE, T
机构：
[1] DUKE UNIV,DEPT PHYS,DURHAM,NC 27708
[2] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27708
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期
关键词：
D O I：
10.1063/1.359415
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An iterative procedure which utilizes the type-I and type-II transitions of a GaAs/AlAs single quantum well is used to determine the GaAs/AlAs valence-band offset. The iteration is based on the fact that the confinement energy is not sensitive to the change of the barrier potential. It has the advantage that knowledge of the thickness of the quantum well is not necessary to determine the valence-band offset. Both the type-I and type-II transitions can be observed in the low-temperature photoluminescence spectrum if the GaAs is thin enough so that the lowest-energy level of the electron in the GaAs well is higher than the X-conduction-band minimum of the adjacent AlAs. We illustrate this procedure with a 35 Å GaAs/AlAs single quantum well, and the valence-band offset is found to be 36% of the Γ-gap difference. © 1995 American Institute of Physics.
引用
收藏
页码：4541 / 4543
页数：3
相关论文
共 50 条
  • [1] Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers
    Hader, J
    Koch, SW
    Moloney, JV
    O'Reilly, EP
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3685 - 3687
  • [2] GAMMA-X CROSSOVER IN GAAS/AIAS SHORT-PERIOD SUPERLATTICE UNDER PRESSURE
    TAKARABE, K
    HITOMI, S
    YOSHIMURA, T
    MINOMURA, S
    KATO, H
    WATANABE, Y
    NAKAYAMA, M
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (06) : 465 - 468
  • [3] COUPLED GAMMA-X ELECTRONIC STATES IN ALAS GAAS QUANTUM WELL STRUCTURES
    LIU, HC
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (01) : 35 - 38
  • [4] MEASUREMENT OF BAND-OFFSET OF A STRAINED-LAYER SINGLE-QUANTUM-WELL BY A CAPACITANCE-VOLTAGE TECHNIQUE
    SUBRAMANIAN, S
    ARORA, BM
    SRIVASTAVA, AK
    FERNANDES, G
    BANERJEE, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7618 - 7620
  • [5] DETERMINATION OF THE VALENCE-BAND OFFSET OF GAAS-(GA,IN)P QUANTUM-WELLS BY PHOTOREFLECTANCE SPECTROSCOPY
    ARNAUD, G
    BORING, P
    GIL, B
    GARCIA, JC
    LANDESMAN, JP
    LEROUX, M
    [J]. PHYSICAL REVIEW B, 1992, 46 (03): : 1886 - 1888
  • [6] Evolution of valence-band alignment with nitrogen content in GaNAs/GaAs single quantum wells
    Shao, Jun
    Lu, Wei
    Sadeghi, M.
    Lue, Xiang
    Wang, S. M.
    Ma, Lili
    Larsson, A.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (03)
  • [7] Determination of the chemical valence-band offset for Zn1-xMnxSe/ZnSe multiple-quantum-well structures of high x
    Klar, PJ
    Wolverson, D
    Davies, JJ
    Heimbrodt, W
    Happ, M
    [J]. PHYSICAL REVIEW B, 1998, 57 (12): : 7103 - 7113
  • [8] Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors
    Lao, Yan-Feng
    Wolde, Seyoum
    Perera, A. G. Unil
    Zhang, Y. H.
    Wang, T. M.
    Kim, J. O.
    Schuler-Sandy, Ted
    Tian, Zhao-Bing
    Krishna, S. S.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (17)
  • [9] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS
    MENENDEZ, J
    PINCZUK, A
    WERDER, DJ
    SPUTZ, SK
    MILLER, RC
    SIVCO, DL
    CHO, AY
    [J]. PHYSICAL REVIEW B, 1987, 36 (15): : 8165 - 8168
  • [10] X-RAY-SCATTERING FROM A SINGLE-QUANTUM-WELL HETEROSTRUCTURE
    RYAN, TW
    HATTON, PD
    BATES, S
    WATT, M
    SOTOMAYORTORRES, C
    CLAXTON, PA
    ROBERTS, JS
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (04) : 241 - 243
12345