Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

被引：2
|
作者：
Xie, Deng [1 ,2 ,3 ]
Qiu, Zhi Ren [4 ,5 ]
Talwar, Devki N. [6 ]
Liu, Yi [7 ]
Song, Jen-Hao [8 ]
Huang, Jow-Lay [8 ]
Mei, Ting [9 ,10 ]
Liu, Chee Wee [2 ,3 ]
Feng, Zhe Chuan [2 ,3 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
[2] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan
[4] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[5] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[6] Indiana Univ Penn, Dept Phys, Indiana, PA 15705 USA
[7] Shenzhen Univ, Coll Phys Sci & Technol, Shenzhen 518060, Peoples R China
[8] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
[9] Northwestern Polytech Univ, Sch Sci, Minist Educ, Key Lab Space Appl Phys & Chem, Xian 710072, Peoples R China
[10] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Opt Informat Technol, Xian 710072, Peoples R China
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2015年 / 12卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
BAlN film; boron aluminium nitride; co-sputtering; dielectric function; spectroscopic ellipsometry; diamond substrate; GENETIC ALGORITHMS; INVERSION;
D O I：
10.1504/IJNT.2015.066197
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents <= 3%, however, do not cause appreciable changes in its direct bandgaps.
引用
收藏
页码：97 / 110
页数：14
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