Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

被引：2

作者：

Xie, Deng ^{[1
,2
,3
]}

Qiu, Zhi Ren ^{[4
,5
]}

Talwar, Devki N. ^{[6
]}

Liu, Yi ^{[7
]}

Song, Jen-Hao ^{[8
]}

Huang, Jow-Lay ^{[8
]}

Mei, Ting ^{[9
,10
]}

Liu, Chee Wee ^{[2
,3
]}

Feng, Zhe Chuan ^{[2
,3
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan

[4] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[5] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China

[6] Indiana Univ Penn, Dept Phys, Indiana, PA 15705 USA

[7] Shenzhen Univ, Coll Phys Sci & Technol, Shenzhen 518060, Peoples R China

[8] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

[9] Northwestern Polytech Univ, Sch Sci, Minist Educ, Key Lab Space Appl Phys & Chem, Xian 710072, Peoples R China

[10] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Opt Informat Technol, Xian 710072, Peoples R China

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2015年 / 12卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

BAlN film; boron aluminium nitride; co-sputtering; dielectric function; spectroscopic ellipsometry; diamond substrate; GENETIC ALGORITHMS; INVERSION;

D O I：

10.1504/IJNT.2015.066197

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents <= 3%, however, do not cause appreciable changes in its direct bandgaps.

引用

页码：97 / 110

页数：14

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