Spectroscopic ellipsometry, optical, structural and electrical investigation of sprayed pure and Sn-doped ZnO thin films

被引:2
|
作者
Mokhtari, H. [1 ]
Benhaliliba, M. [1 ]
Aida, M. S. [2 ]
Attaf, N. [2 ]
Ocak, Y. [3 ]
机构
[1] USTO MB Univ, Fac Sci, Dept Phys, BP1505 Oran, Oran, Algeria
[2] Plasma Mentouri Univ, Thin Film Lab, Constantine 25000, Algeria
[3] Dicle Univ, Fac Educ, Dept Sci, Diyarbakir, Turkey
关键词
ZnO; ultrasonic spray pyrolysis; Sn-doping; X-rays patterns; optical properties; electrical properties; spectroscopy ellipsometry; refractive index; GROWTH; PHOTOCONDUCTIVITY;
D O I
10.1051/epjconf/20134403006
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
in this work, we report the transparent pure and Sn-doped zinc oxide (ZnO). The films were deposited onto microscope glass substrate which was heated at 350+/-5C degrees by ultrasonic spray pyrolysis (U S P) deposition technique. The concentrations of Sn were selected within the range of 0-3% by step of 0.5% and the time deposition is kept at 5 min. A (002)-oriented wurtzite crystal structure was confirmed by X-rays patterns; and grain size varied within the range 7.37-14.84nm, and cristanillity is calculated goes from14.4 to 45.9%. Based on UV-VIS-IR analysis, the results revealed the high transparency of the sprayed films which exceeds 90%. The band gap energy was of 3.26-3.30 eV. The film thickness was estimated by spectroscopy ellipsometry and the found values were of 165-270nm. The refractive index is in the range of 2.75. The obtained electrical parameters were around 10(18) cm(-3), 3.6 cm(2)/Vs, 1.6 Omega.cm; 5.8cm(3)/C. finally the Sn-doping has influenced the physical parameters of as-ground ZnO films
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页数:12
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