Electrical and optical characteristics of boron doped nanocrystalline diamond films

被引：6

作者：

Stuchlikova, T. H. ^{[1
]}

Remes, Z. ^{[1
]}

Mortet, V ^{[1
]}

Taylor, A. ^{[1
]}

Ashcheulov, P. ^{[1
]}

Stuchlik, J. ^{[1
]}

Volodin, V. A. ^{[2
,3
]}

机构：

[1] CAS, Inst Phys, Cukrovarnicka 10-112, Prague 16200 6, Czech Republic

[2] Novosibirsk State Univ, Pirogova St 2, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Siberian Div, AV Rzhanov Inst Semicond Phys, Lavrenteva 13, Novosibirsk 630090, Russia

来源：

VACUUM | 2019年 / 168卷

关键词：

INDIUM OXIDE; FANO;

D O I：

10.1016/j.vacuum.2019.108813

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron doped diamond is a prospective material which can be used as a conductive and optically transparent thin-film electrode in a variety of optoelectronic applications. In this work, we present the results of the temperature resolved electrical conductivity, optical reflection, transmission and absorption of thin boron doped nanocrystalline diamond films grown by a microwave plasma enhanced chemical vapor deposition. Optical transmittance, reflectance and absorptance properties of layers were studied by a photo-thermal deflection spectroscopy analysis. Raman spectroscopy with various excitation wavelengths was employed for the analysis of nanocrystalline diamond layers. The measured position, shift and broadening of the characteristic boron doped diamond Raman lines were used for the determination of the boron concentration. Correlation between the results of the atomic boron concentration estimated via the Raman analysis and measured electrical conductivity values is presented.

引用

页数：4

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