Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

被引：0
|
作者：
Matsuura, K. [1 ]
Hamada, M. [1 ]
Hamada, T. [1 ]
Tanigawa, H. [1 ]
Sakamoto, T. [1 ]
Cao, W. [2 ]
Parto, K. [2 ]
Hori, A. [1 ]
Muneta, I. [1 ]
Kawanago, T. [1 ]
Kakushima, K. [1 ]
Tsutsui, K. [1 ]
Ogura, A. [3 ]
Banerjee, K. [1 ,2 ]
Wakabayashi, H. [1 ]
机构：
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Yokohama, Kanagawa, Japan
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Meiji Univ, Grad Sch Sci & Technol, Kawasaki, Kanagawa, Japan
来源：
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2019年
关键词：
Transition metal di-chalcogenide; MoS2; Normally-off; Sputtering; Sulfur powder anneal; MoSi2;
D O I：
10.23919/iwjt.2019.8802622
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We have successfully fabricated chip-level integrated nMISFETs with sputtered molybdenum disulfide (MoS2) thin channel using sulfur-powder annealing (SPA) and molybdenum disilicide (MoSi2) contact which show n-type-normally-off operation in accumulation. SPA intentionally compensated sulfur vacancies of sputtered MoS2 film. Eventually, we achieved a normally-off operation, which realizes industrial chip-level LSIs with MoS2 channel.
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页数：4
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