Recessed gate normally-OFF Al2O3/lnAIN/GaN MOS-HEMT on silicon

被引：9

作者：

Freedsman, Joseph J. ^{[1
]}

Watanabe, Arata ^{[1
]}

Ito, Tatsuya ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

基金：

日本科学技术振兴机构;

关键词：

BREAKDOWN VOLTAGE; DENSITY;

D O I：

10.7567/APEX.7.104101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a gate-recessed Al2O3/lnAIN/GaN normally-OFF metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) on Si is reported. The fabricated MOS-HEMT with a gate length of 1.5 mu m features a high drain current density of 840 mA/mm at a gate bias (V-gs) of +8 V, a low specific ON-resistance of 0.8 m Omega.cm(2), and a threshold voltage of +1.9V. The Al2O3/lnAIN/GaN MOS-HEMT also exhibits a low gate leakage current (similar to 10(-8)mA/mm at Vgs = +8V) and a maximum peak field-effect mobility of 472 cm(2)V(-1)s(-1). The OFF-state breakdown voltage of the device (L-gd = 4 mu m) is 278 V at V-gs = 0V. (C) 2014 The Japan Society of Applied Physics

引用

页数：3

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