Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

被引：0
|
作者：
Shimizu, Jun'ichi [1 ]
Ohashi, Takumi [1 ]
Matsuura, Kentaro [1 ]
Muneta, Iriya [1 ]
Kakushima, Kuniyuki [1 ]
Tsutsui, Kazuo [1 ]
Ikarashi, Nobuyuki [2 ]
Wakabayashi, Hitoshi [1 ]
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa, Japan
[2] Nagoya Univ, Nagoya, Aichi, Japan
来源：
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate low-temperature formation process of sputtered-MoS2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS2 was annealed in H2S at from 200 to 400 degrees C. We find that the hydrogen sulfur (H2S) annealing compensate for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2.10(16) cm(-3).
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页码：222 / 223
页数：2
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