Orientation controlling of Pb(Zr0.53Ti0.47)O3 thin films prepared on silicon substrates with the thickness of La0.5Sr0.5CoO3 electrodes

Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were prepared on La0.5Sr0.5CoO3 (LSCO) coated Si substrates by a sol-gel route. The thickness of LSCO electrode was found to modify the preferential orientation of PZT thin films, which consequently affected the dielectric and ferroelectric properties. (100) textured PZT films with dense columnar structure could be obtained on the top of (110) textured LSCO with thickness of 230 nm. PZT thin films prepared on the optimized LSCO films exhibit the enhanced dielectric constant and remnant polarization of 980 and 20 mu C/cm(2), respectively.