Structural and ferroelectric properties of (Pb0.93La0.07)(Zr0.53Ti0.47)O3 thin films

被引：0
|
作者：
Blanco, O.
Martinez, E.
Heiras, J.
Castellanos-Guzman, A. G.
机构：
[1] Univ Guadalajara, Ctr Invest Mat, DIP, CUCEI, Guadalajara 44281, Jalisco, Mexico
[2] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada, Baja California, Mexico
来源：
INTEGRATED FERROELECTRICS | 2006年 / 83卷
关键词：
ferroelectric thin films; PLZT; RF sputtering; heterostructures;
D O I：
10.1080/10584580600949097
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric thin films of (Pb0.93La0.07)(Zr0.53Ti0.47)O-3 (PLZT) were grown on Si single crystal substrates, by a high-oxygen pressure RF sputtering technique. Layers of Pt and La0.5Sr0.5CoO3 (LSCO) were used as bottom electrodes. The structural properties were characterized by XRD and RBS analyses. Ferroelectric properties were determined by polarization hysteresis loops and the IN characteristics. The ferroelectric hysteresis loops show ferroelectric behavior. The leakage current characteristics of the capacitors are ohmic up to the energy of the traps. Above that, a quadratic dependence of current I upon voltage V is exhibited. The dominant conduction mechanism for these capacitors is the space-charge limited current conduction (SCLC).
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页码：81 / 87
页数：7
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