PbZr0.5Ti0.5O3 thin films prepared on La0.5Sr0.5CoO3/LaNiO3 heterostructures for integrated ferroelectric devices

被引：0
|
作者：
Wang, GS [1 ]
Lai, ZQ [1 ]
Meng, XJ [1 ]
Sun, JL [1 ]
Yu, J [1 ]
Guo, SL [1 ]
Chu, JH [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
La0.5Sr0.5CoO3 /LaNiO3 (LSCO/LNO) heterostructures have been grown on Si(100) substrate by chemical solution deposition (MSD) technique. PbZr0.5Ti0.5O3 (PZT) thin films deposited onto LSCO/LNO hetero-structure by a modified sot-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 muOmega . cm) of LSCO/LNO heterostructures were obtained by annealing at 750 degreesC. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films' are polycrystalline and entirely perovskite phase. The Pt/PZT/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 10(9) switching cycles. The remnant polarization P, and the coercive field E-c are about 28 muC/cm(2) and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.
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页码：718 / 721
页数：4
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