Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

被引：4
|
作者：
Shi, Min Xian [1 ]
Mao, Wei [1 ]
Qin, Yan [1 ]
Huang, Zhi Xiong [1 ]
Guo, Dong Yun [1 ]
机构：
[1] Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
来源：
ADVANCES IN COMPOSITES, PTS 1 AND 2 | 2011年 / 150-151卷
关键词：
Pb(Zr0.53Ti0.47)O-3 thin film; film thichness; film structure and properties;
D O I：
10.4028/www.scientific.net/AMR.150-151.112
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
Pb(Zr0.53Ti0.47)O-3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.
引用
收藏
页码：112 / 117
页数：6
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