Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate

被引：6

作者：

Liu, Yan ^{[1
]}

Yan, Jing ^{[1
]}

Liu, Mingshan ^{[1
]}

Wang, Hongjuan ^{[1
]}

Zhang, Qingfang ^{[1
]}

Zhao, Bin ^{[1
]}

Zhang, Chunfu ^{[2
]}

Cheng, Buwen ^{[3
]}

Hao, Yue ^{[2
]}

Han, Genquan ^{[1
,2
]}

机构：

[1] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China

[2] Xidian Univ, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 11期

基金：

中国国家自然科学基金;

关键词：

MOSFET; GeSn; mobility; PASSIVATION; GERMANIUM;

D O I：

10.1088/0268-1242/29/11/115027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the dependence of the electrical performance on surface orientations of undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs on Ge(111) and (001) substrates. (111)-oriented Ge0.92Sn0.08 QW pMOSFETs show a peak mu(eff) of 845 cm(2) V-1 s(-1) and demonstrate a mu(eff) improvement of 25% over (001)-oriented control at an inversion charge density of 5 x 10(12) cm(-2). We also report that undoped Ge0.92Sn0.08 QW pMOSFETs show a higher mu(eff) than the doped GeSn devices reported in the literature. The high mu(eff) achieved in undoped QW devices is enabled by incorporating high biaxial compressive strain (1.43%) and eliminating dopant impurity scattering in the defect-free channel.

引用

页数：5

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