Junctionless Ge p-Channel metal-oxide-semiconductor field-effect transistors fabricated on ultrathin ge-on-insulator substrate

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Department of Materials Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan ^{[1
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Appl. Phys. Express | / 3卷

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摘要：

Metals - MOS devices - Germanium compounds - Semiconductor junctions - MOSFET devices - Semiconducting silicon - Silicon on insulator technology - Substrates

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[1] Junctionless Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
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[J]. APPLIED PHYSICS EXPRESS, 2011, 4 (03)
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