Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

被引：17
|
作者：
Yokoyama, Masafumi [1 ,2 ]
Yokoyama, Haruki [3 ]
Takenaka, Mitsuru [1 ,2 ]
Takagi, Shinichi [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Yayoi 2-11-16, Tokyo 1130032, Japan
[2] JST CREST, Bunkyo Ku, Tokyo 1130032, Japan
[3] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 07期
关键词：
D O I：
10.1063/1.4906922
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al2O3 and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of similar to 76 cm(2)/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al2O3 ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm(2)/V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer. (C) 2015 AIP Publishing LLC.
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页数：4
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