High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

被引：25

作者：

Dissanayake, Sanjeewa ^{[1
]}

Tomiyama, Kentaro ^{[1
]}

Sugahara, Satoshi ^{[2
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Tokyo Inst Technol, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 04期

关键词：

HOLE MOBILITY; STRAINED-GE; GOI LAYERS; SOURCE/DRAIN; DEPENDENCE; MOSFETS;

D O I：

10.1143/APEX.3.041302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the operation of 12-nm-thick, (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors along < 110 > channel direction [(110)/< 110 > GOI pMOSFETs], fabricated by the Ge condensation technique. The device operation under the accumulation mode was observed with the back gate structure. (110)/< 110 > GOI pMOSFETs have exhibited 2.3 times higher effective hole mobility, comparing with (100)-oriented GOI control devices (mu(eff-GOI(100))). Also, present devices have the hole mobility enhancement factor of 3.0 and 1.5 against the (100)-oriented Si universal hole mobility and the (110)-oriented Si-on-insulator (SOI) effective hole mobility, respectively. These results demonstrate the superior hole transport properties of (110)/< 110 > GOI pMOSFETs. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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