Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate

被引：6

作者：

Liu, Yan ^{[1
]}

Yan, Jing ^{[1
]}

Liu, Mingshan ^{[1
]}

Wang, Hongjuan ^{[1
]}

Zhang, Qingfang ^{[1
]}

Zhao, Bin ^{[1
]}

Zhang, Chunfu ^{[2
]}

Cheng, Buwen ^{[3
]}

Hao, Yue ^{[2
]}

Han, Genquan ^{[1
,2
]}

机构：

[1] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China

[2] Xidian Univ, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 11期

基金：

中国国家自然科学基金;

关键词：

MOSFET; GeSn; mobility; PASSIVATION; GERMANIUM;

D O I：

10.1088/0268-1242/29/11/115027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the dependence of the electrical performance on surface orientations of undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs on Ge(111) and (001) substrates. (111)-oriented Ge0.92Sn0.08 QW pMOSFETs show a peak mu(eff) of 845 cm(2) V-1 s(-1) and demonstrate a mu(eff) improvement of 25% over (001)-oriented control at an inversion charge density of 5 x 10(12) cm(-2). We also report that undoped Ge0.92Sn0.08 QW pMOSFETs show a higher mu(eff) than the doped GeSn devices reported in the literature. The high mu(eff) achieved in undoped QW devices is enabled by incorporating high biaxial compressive strain (1.43%) and eliminating dopant impurity scattering in the defect-free channel.

引用

页数：5

共 50 条

[31] High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
Hirama, Kazuyuki
Tsuge, Kyosuke
Sato, Syunsuke
Tsuno, Tetsuya
Jingu, Yoshikatsu
Yamauchi, Shintaro
Kawarada, Hiroshi
[J]. APPLIED PHYSICS EXPRESS, 2010, 3 (04)
[32] Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor
Harada, S
Kosugi, R
Senzaki, J
Cho, WJ
Fukuda, K
Arai, K
Suzuki, S
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1568 - 1571
[33] Achieving low parasitic resistance in Ge p-channel metal-oxide-semiconductor field-effect transistors by ion implantation after germanidation
Chang, Wen Hsin
Ota, Hiroyuki
Maeda, Tatsuro
[J]. APPLIED PHYSICS EXPRESS, 2015, 8 (05)
[34] Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
Guo, Pengfei
Han, Genquan
Gong, Xiao
Liu, Bin
Yang, Yue
Wang, Wei
Zhou, Qian
Pan, Jisheng
Zhang, Zheng
Tok, Eng Soon
Yeo, Yee-Chia
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (04)
[35] Undoped Ge0.92Sn0.08 Quantum Well PMOSFETs on (001), (011) and (111) Substrates with In Situ Si2H6 Passivation: High Hole Mobility and Dependence of Performance on Orientation
Liu, Mingshan
Han, Genquan
Liu, Yan
Zhang, Chunfu
Wang, Hongjuan
Li, Xiangdong
Zhang, Jincheng
Cheng, Buwen
Hao, Yue
[J]. 2014 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TECHNOLOGY): DIGEST OF TECHNICAL PAPERS, 2014,
[36] Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility
Yan Liu
Jing Yan
Hongjuan Wang
Buwen Cheng
Genquan Han
[J]. International Journal of Thermophysics, 2015, 36 : 980 - 986
[37] Mechanical tensile strain induced gate and substrate currents change in n and p-channel metal-oxide-semiconductor field-effect transistors
Wu, Wangran
Pu, Yu
Sun, Jiabao
Zhao, Yi
Xu, Xiangming
Shi, Yi
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (05)
[38] Effect of magnetic field on random telegraph noise in the source current of p-channel metal-oxide-semiconductor field-effect transistors
Baron, FA
Zhang, YH
Bao, MQ
Li, RG
Li, JM
Wang, KL
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (04) : 710 - 712
[39] HOT-CARRIER DEPENDENT RADIATION EFFECTS IN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
DAS, NC
NATHAN, V
[J]. SOLID-STATE ELECTRONICS, 1994, 37 (10) : 1781 - 1782
[40] Characteristics of deep submicron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors
Ren, HX
Hao, Y
Xue, L
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (10): : 5893 - 5899

← 1 2 3 4 5 →