Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate

被引：6
|
作者：
Liu, Yan [1 ]
Yan, Jing [1 ]
Liu, Mingshan [1 ]
Wang, Hongjuan [1 ]
Zhang, Qingfang [1 ]
Zhao, Bin [1 ]
Zhang, Chunfu [2 ]
Cheng, Buwen [3 ]
Hao, Yue [2 ]
Han, Genquan [1 ,2 ]
机构：
[1] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China
[2] Xidian Univ, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 11期
基金：
中国国家自然科学基金;
关键词：
MOSFET; GeSn; mobility; PASSIVATION; GERMANIUM;
D O I：
10.1088/0268-1242/29/11/115027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the dependence of the electrical performance on surface orientations of undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs on Ge(111) and (001) substrates. (111)-oriented Ge0.92Sn0.08 QW pMOSFETs show a peak mu(eff) of 845 cm(2) V-1 s(-1) and demonstrate a mu(eff) improvement of 25% over (001)-oriented control at an inversion charge density of 5 x 10(12) cm(-2). We also report that undoped Ge0.92Sn0.08 QW pMOSFETs show a higher mu(eff) than the doped GeSn devices reported in the literature. The high mu(eff) achieved in undoped QW devices is enabled by incorporating high biaxial compressive strain (1.43%) and eliminating dopant impurity scattering in the defect-free channel.
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页数：5
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