Atom probe tomography of nanostructures

被引:8
|
作者
Gnaser, Hubert [1 ,2 ,3 ]
机构
[1] Inst Oberflachen & Schichtanalyt IFOS, D-67663 Kaiserslautern, Germany
[2] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany
[3] Univ Kaiserslautern, Forschungszentrum OPTIMAS, D-67663 Kaiserslautern, Germany
关键词
atom probe tomography; Fe; Cr; Fe multilayers; Si nanocrystals; GaN; LOCAL MAGNIFICATION; SILICON; RECONSTRUCTION; OVERLAPS;
D O I
10.1002/sia.5507
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atom probe tomography (APT) constitutes a rather unique analytical technique for the 3D elemental characterization of solid materials with potentially sub-nm spatial resolution. APT is, therefore, very well suited for the analysis of a nanostructured specimen such as matrix-embedded nanoparticles, ultra-thin films and junctions, grain boundaries, and others. This presentation will emphasize these capabilities, describing three methods of data mining that can be used to fully exploit APT: (i) Visualization of atomic lattice planes in crystalline specimens, (ii) the determination of iso-concentration surfaces and proximity histograms derived thereof, and (iii) a cluster identification algorithm based on maximum-atom separations. These approaches will be illustrated by means of different types of samples: a crystalline tungsten specimen, a Fe/Cr/Fe multilayer system, Si nanocrystals embedded in a silicon oxide matrix, and Mg clustering in GaN. The results demonstrate clearly that sub-nm-sized structures can be characterized by APT. Copyright (c) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:383 / 388
页数:6
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