Atom probe tomography of nanostructures

被引:9
|
作者
Gnaser, Hubert [1 ,2 ,3 ]
机构
[1] Inst Oberflachen & Schichtanalyt IFOS, D-67663 Kaiserslautern, Germany
[2] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany
[3] Univ Kaiserslautern, Forschungszentrum OPTIMAS, D-67663 Kaiserslautern, Germany
关键词
atom probe tomography; Fe; Cr; Fe multilayers; Si nanocrystals; GaN; LOCAL MAGNIFICATION; SILICON; RECONSTRUCTION; OVERLAPS;
D O I
10.1002/sia.5507
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atom probe tomography (APT) constitutes a rather unique analytical technique for the 3D elemental characterization of solid materials with potentially sub-nm spatial resolution. APT is, therefore, very well suited for the analysis of a nanostructured specimen such as matrix-embedded nanoparticles, ultra-thin films and junctions, grain boundaries, and others. This presentation will emphasize these capabilities, describing three methods of data mining that can be used to fully exploit APT: (i) Visualization of atomic lattice planes in crystalline specimens, (ii) the determination of iso-concentration surfaces and proximity histograms derived thereof, and (iii) a cluster identification algorithm based on maximum-atom separations. These approaches will be illustrated by means of different types of samples: a crystalline tungsten specimen, a Fe/Cr/Fe multilayer system, Si nanocrystals embedded in a silicon oxide matrix, and Mg clustering in GaN. The results demonstrate clearly that sub-nm-sized structures can be characterized by APT. Copyright (c) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:383 / 388
页数:6
相关论文
共 50 条
  • [1] Atom probe tomography of metallic nanostructures
    Hono, Kazuhiro
    Raabe, Dierk
    Ringer, Simon P.
    Seidman, David N.
    MRS BULLETIN, 2016, 41 (01) : 23 - 29
  • [2] Atom probe tomography of metallic nanostructures
    Kazuhiro Hono
    Dierk Raabe
    Simon P. Ringer
    David N. Seidman
    MRS Bulletin, 2016, 41 : 23 - 29
  • [3] Accuracy of analyses of microelectronics nanostructures in atom probe tomography
    Vurpillot, F.
    Rolland, N.
    Estivill, R.
    Duguay, S.
    Blavette, D.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (07)
  • [4] Elemental distribution analysis of semiconductor nanostructures with atom probe tomography
    Shimizu, Yasuo
    Inoue, Koji
    Takamizawa, Hisashi
    Yano, Fumiko
    Nagai, Yasuyoshi
    Journal of the Vacuum Society of Japan, 2013, 56 (09) : 340 - 347
  • [5] Atom probe tomography
    Miller, M. K.
    Forbes, R. G.
    MATERIALS CHARACTERIZATION, 2009, 60 (06) : 461 - 469
  • [6] Atom probe tomography
    Kareh, Kristina Maria
    NATURE REVIEWS METHODS PRIMERS, 2021, 1 (01):
  • [7] Atom probe tomography
    Nature Reviews Methods Primers, 1
  • [8] Atom Probe Tomography
    Felfer, P.
    Stephenson, L. T.
    Li, T.
    PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY, 2018, 55 (08): : 515 - 526
  • [9] 6H-SiC-Fe Nanostructures Studied by Atom Probe Tomography
    Diallo, Lindor
    Fnidiki, Abdeslem
    Lechevallier, Luc
    Zarefy, Amjaad
    Juraszek, Jean
    Cuvilly, Fabien
    Blum, Ivan
    Viret, Michel
    Marteau, Marc
    Eyidi, Dominique
    Declemy, Alain
    IEEE MAGNETICS LETTERS, 2018, 9
  • [10] Atom Probe Tomography
    Shea, John J.
    IEEE ELECTRICAL INSULATION MAGAZINE, 2017, 33 (04) : 71 - 71