Modeling Annular Through-Silicon Via Pairs in 3-D Integration

被引：0
|
作者：
Chen, Aobo [1 ]
Liang, Feng [1 ]
Wang, Gaofeng [2 ]
Wang, Bing-Zhong [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Peoples R China
[2] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou, Zhejiang, Peoples R China
来源：
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年
关键词：
Annular through-silicon via (TSV); analytical formula; eddy current; skin effect; 3-D integration; wideband; VIAS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A compact wideband model is introduced for annular through-silicon vias in three-dimensional integrated circuits. Closed-form formulas for the per-unit-height resistances and inductances of annular TSVs are obtained with inclusion of the metal-oxide-semiconductor effect, the skin effect in metal conductors, and the eddy current loss in semiconductors. The results from these analytical formulas have comparable accuracy as those from the full-wave solver in a wide frequency range.
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页数：3
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