3D THROUGH-SILICON VIA FILLING WITH ELECTROCHEMICAL NANOMATERIALS

被引：0
|
作者：
Dubin, V. M. [1 ]
机构：
[1] NANO3D SYST LLC, Portland, OR 97229 USA
来源：
PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES | 2013年
关键词：
BOTTOM-UP FILL; COPPER; PULSE; ELECTRODEPOSITION; STRENGTH; HOLES; ACID; ION;
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
This paper reviews electrochemical processes for the application in 3D through-silicon via fill technology. Electroplating, electroless plating and electrografting techniques are being investigated for barrier/seed and Cu superfill. Replacement of poor step coverage PVD barrier/seed with conformal electroless barrier/seed and low bottom up fill rate acceleration-based electroplating with superfill suppression-based electroplating will allow defect free-fill of high aspect ratio vias. Integration of electroless plating and electroplating will enable all-wet through-silicon via fill that exceed current fill techniques in scalability at lower process cost.
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页码：331 / 339
页数：9
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