Wideband Electromagnetic Modeling of Coaxial-Annular Through-Silicon Vias

被引：16
|
作者：
Lu, Qijun [1 ]
Zhu, Zhangming [1 ]
Liu, Yang [1 ]
Liu, Xiaoxian [1 ]
Yin, Xiangkun [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2018年 / 60卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Eddy-current effect; equivalent-circuit model; skin effect; three-dimensional integrated circuits (3-D ICs); through-silicon vias (TSVs); EQUIVALENT-CIRCUIT MODEL; KEEP-OUT-ZONE; TSVS; TEMPERATURE; INTEGRATION; PARAMETERS; ICS;
D O I：
10.1109/TEMC.2017.2771293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband equivalent-circuit model of coaxial-annular through-silicon vias (TSVs) for three-dimensional (3-D) integrated circuits is proposed in this paper. Rigorous closed-form formulas for the resistance and inductance of coaxial-annular TSVs are derived by computing the longitudinal electrical field in Cu and the longitudinal magnetic vector potentials in SiO2 and Si substrate with Bessel functions. The equivalent-circuit model can appropriately capture the skin effect in Cu as well as eddy-current effect in Si substrate. The proposed model is verified using 3-D full-wave field solver high frequency simulator structure, showing that it can yields highly accurate results up to 100 GHz.
引用
收藏
页码：1915 / 1922
页数：8
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