Mobility Spectrum Analysis of Magnetoresistance in Fully-Depleted MOSFETs

被引：0

作者：

Umana-Membreno, G. A. ^{[1
]}

Chang, S. -J. ^{[2
]}

Bawedin, M. ^{[3
]}

Antoszewski, J. ^{[1
]}

Cristoloveanu, S. ^{[4
]}

Faraone, L. ^{[1
]}

机构：

[1] Univ Western Australia, Sch EE&C Eng, Crawley, WA 6009, Australia

[2] Yale Univ, New Haven, CT 06511 USA

[3] Univ Montpellier 2, IES, Montpellier, France

[4] Grenoble INP Minatec, IMEP LAHC, F-38016 Grenoble, France

来源：

PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) | 2014年

关键词：

mobility; FD-SOI; volume inversion; mobility spectrum analysis; magnetoresistance; Hall-effect; MOSFET; TRANSPORT; SIMULATION; HGCDTE; LAYERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-resolution mobility spectrum analysis has been employed to study the magnetic-field dependent geometrical magnetoresistance characteristics of planar FD-SOI MOSFETs with 10 nm thick transistor channel layer. It is shown that transport in the Si channel is due to two well-defined electron species. According to self-consistent Poisson-Schrdinger calculations, these species correspond to carriers in two distinct subbands within the Si channel region which arise from strong carrier confinement and volume inversion. The mobility peak of the first sub-band was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.

引用

页码：409 / 412

页数：4

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