INVESTIGATION OF THE INFLUENCE OF THE FILM THICKNESS IN ACCUMULATION-MODE FULLY-DEPLETED SIMOX MOSFETS

被引：4
|
作者：
FAYNOT, O
AUBERTONHERVE, AJ
CRISTOLOVEANU, S
机构：
[1] LETI (CEA-Technologies Avancées) DMEL -CENG, 38041 Grenoble Cedex
[2] SOITEC, Site Technologique ASTEC BP85X
[3] Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS) ENSERG, 38016 Grenoble Cedex
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90549-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An experimental analysis of the film thickness influence on the performance of accumulation-mode SIMOX MOSFET's is presented. The main parameters studied are the interface coupling occurring for very thin film and their influence on the main device parameters such as threshold voltage, subthreshold slope and holding voltage. Films as thin as 45 nm have been used to process experimental devices. Their behavior, mainly in the breakdown regime, demonstrates the interest of film thickness lowering to improve device characteristics.
引用
收藏
页码：807 / 810
页数：4
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