INVESTIGATION OF THE INFLUENCE OF THE FILM THICKNESS IN ACCUMULATION-MODE FULLY-DEPLETED SIMOX MOSFETS

被引：4
|
作者：
FAYNOT, O
AUBERTONHERVE, AJ
CRISTOLOVEANU, S
机构：
[1] LETI (CEA-Technologies Avancées) DMEL -CENG, 38041 Grenoble Cedex
[2] SOITEC, Site Technologique ASTEC BP85X
[3] Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS) ENSERG, 38016 Grenoble Cedex
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90549-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An experimental analysis of the film thickness influence on the performance of accumulation-mode SIMOX MOSFET's is presented. The main parameters studied are the interface coupling occurring for very thin film and their influence on the main device parameters such as threshold voltage, subthreshold slope and holding voltage. Films as thin as 45 nm have been used to process experimental devices. Their behavior, mainly in the breakdown regime, demonstrates the interest of film thickness lowering to improve device characteristics.
引用
收藏
页码：807 / 810
页数：4
相关论文
共 50 条
  • [31] Interface coupling and film thickness measurement on thin oxide thin film fully depleted SOI MOSFETs
    Cassé, M
    Poiroux, T
    Faynot, O
    Raynaud, C
    Tabone, C
    Allain, F
    Reimbold, G
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 87 - 90
  • [32] Ultra-thin-film fully-depleted CMOS/SIMOX technology with selective CVD-tungsten and its application to LSIs
    Sato, Y
    Kosugi, T
    Ishii, H
    MICROELECTRONIC DEVICE TECHNOLOGY II, 1998, 3506 : 218 - 229
  • [33] High Performance and Low Variability Fully-Depleted Strained-SOI MOSFETs
    Mazurier, J.
    Weber, O.
    Andrieu, F.
    Allain, F.
    Tabone, C.
    Toffoli, A.
    Fenouillet-Beranger, C.
    Brevard, L.
    Tosti, L.
    Perreau, P.
    Belleville, M.
    Faynot, O.
    2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
  • [34] Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs
    Esqueda, I. S.
    Barnaby, H. J.
    McLain, M. L.
    Adell, P. C.
    Mamouni, F. E.
    Dixit, S. K.
    Schrimpf, R. D.
    Xiong, W.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) : 2247 - 2250
  • [35] MODELING OF ACCUMULATION-MODE MOSFETS IN POLYSILICON THIN-FILMS
    AHMED, SS
    KIM, DM
    SHICHIJO, H
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 313 - 315
  • [36] Electron Mobility of Thin Layer SOI MOSFETs in Accumulation-Mode
    Kulubaeva, Elza G.
    Naumova, Olga V.
    Fomin, Boris I.
    Popov, Vladimir P.
    2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM), 2014, : 39 - 41
  • [37] A Novel Scaling Theory for Fully-Depleted Omega-Gate (ΩG) MOSFETs
    Gao, Hong-Wun
    Chiang, Te-Kuang
    2013 IEEE 10TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2013,
  • [38] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations
    Kuroda, R.
    Teramoto, A.
    Cheng, W.
    Sugawa, S.
    Ohmi, T.
    2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 47 - +
  • [39] MultiGate SOI MOSFETs: Accumulation-Mode vs. Enhancement-Mode
    Afzalian, A.
    Lederer, D.
    Lee, C. -W
    Yan, R.
    Xiong, W.
    Cleavelin, C. Rinn
    Colinge, J. -P.
    2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 81 - +
  • [40] ANOMALOUS SUBTHRESHOLD SLOPES IN THIN-FILM ACCUMULATION-MODE SOI P-CHANNEL MOSFETS
    TOKUNAGA, K
    STURM, JC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2413 - 2415
12345