Mobility Spectrum Analysis of Magnetoresistance in Fully-Depleted MOSFETs

被引：0

作者：

Umana-Membreno, G. A. ^{[1
]}

Chang, S. -J. ^{[2
]}

Bawedin, M. ^{[3
]}

Antoszewski, J. ^{[1
]}

Cristoloveanu, S. ^{[4
]}

Faraone, L. ^{[1
]}

机构：

[1] Univ Western Australia, Sch EE&C Eng, Crawley, WA 6009, Australia

[2] Yale Univ, New Haven, CT 06511 USA

[3] Univ Montpellier 2, IES, Montpellier, France

[4] Grenoble INP Minatec, IMEP LAHC, F-38016 Grenoble, France

来源：

PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) | 2014年

关键词：

mobility; FD-SOI; volume inversion; mobility spectrum analysis; magnetoresistance; Hall-effect; MOSFET; TRANSPORT; SIMULATION; HGCDTE; LAYERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-resolution mobility spectrum analysis has been employed to study the magnetic-field dependent geometrical magnetoresistance characteristics of planar FD-SOI MOSFETs with 10 nm thick transistor channel layer. It is shown that transport in the Si channel is due to two well-defined electron species. According to self-consistent Poisson-Schrdinger calculations, these species correspond to carriers in two distinct subbands within the Si channel region which arise from strong carrier confinement and volume inversion. The mobility peak of the first sub-band was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.

引用

页码：409 / 412

页数：4

共 50 条

[1] High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs
Umana-Membreno, G. A.
Chang, S-J.
Bawedin, M.
Antoszewski, J.
Cristoloveanu, S.
Faraone, L.
SOLID-STATE ELECTRONICS, 2015, 113 : 109 - 115
[2] Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs
Chang, Sung-Jae
Bawedin, Maryline
Cristoloveanu, Sorin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (06) : 1979 - 1986
[3] A DC MODEL FOR FULLY-DEPLETED SOI MOSFETS
KASEMSUWAN, V
ELNOKALI, M
INTERNATIONAL JOURNAL OF ELECTRONICS, 1995, 79 (03) : 281 - 292
[4] Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs
Umana-Membreno, G. A.
Akhavan, N. D.
Antoszewski, J.
Faraone, L.
Cristoloveanu, S.
SOLID-STATE ELECTRONICS, 2021, 183
[5] A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs
Sánchez, FJG
Ortiz-Conde, A
Cerdeira, A
Estrada, M
Flandre, D
Liou, JJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (01) : 82 - 88
[6] Novel Characterization of Fully-Depleted GeOI pMOSFET by Magnetoresistance
Van Den Daele, W.
Le Royer, C.
Augendre, E.
Ghibaudo, G.
Cristoloveanu, S.
2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
[7] SIMULATION OF THE TRANSIENT CHARACTERISTICS OF PARTIALLY-DEPLETED AND FULLY-DEPLETED SOI MOSFETS
TAI, GC
KORMAN, CE
MAYERGOYZ, ID
SOLID-STATE ELECTRONICS, 1994, 37 (07) : 1387 - 1394
[8] A novel methodology for reliability studies in fully-depleted SOI MOSFETs
Banna, SR
Chan, PCH
Wong, SS
Fung, SKH
Ko, PK
1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL, 1997, : 296 - 299
[9] Strain Transfer Structure as a Mobility Booster for Fully-Depleted SOI MOSFETs at the 10nm Node
Morvan, S.
Andrieu, F.
Barbe, J-C
Ghibaudo, G.
2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 57 - 60
[10] Radiation effect on electrical properties of fully-depleted unibond SOI MOSFETs
Houk, Y
Nazarov, AN
Turchanikov, VI
Lysenko, VS
Adriaensen, S
Flandre, D
Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, 2005, 185 : 233 - 239

← 1 2 3 4 5 →