MOBILITY-FIELD BEHAVIOR OF FULLY DEPLETED SOI MOSFETS

被引：40
|
作者：
WANG, J
KISTLER, N
WOO, J
VISWANATHAN, CR
机构：
[1] University of California, Department of Electrical Engineering, Los Angeles, 90024
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 04期
关键词：
D O I：
10.1109/55.285411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports measured effective mobility vs. effective vertical electric field and the accompanying experimental method of extraction for the fully depleted (FD) SOI MOSFET. The effective channel mobility vs. effective vertical electric field behavior was investigated as a function of the SOI film doping concentration, the SOI back-gate bias, and the SOI film thickness. The validity of using the approximation, Q(i) = C(ox)(V(GS) -V(TH)), for the inversion charge density in FD SOI is examined and experimentally confirmed.
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页码：117 / 119
页数：3
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