A 2DAnalytical Model of the Channel Potential and Threshold Voltage of Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile

被引：2
|
作者：
Tiwari, Pramod Kumar [1 ]
Kumar, Surendra [1 ]
Mittal, Samarth [1 ]
Srivastava, Vaibhav [1 ]
Pandey, Utkarsh [1 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Res Microelect, Varanasi 221005, Uttar Pradesh, India
来源：
2009 INTERNATIONAL CONFERENCE ON MULTIMEDIA, SIGNAL PROCESSING AND COMMUNICATION TECHNOLOGIES | 2009年
关键词：
SOI MOSFETS;
D O I：
10.1109/MSPCT.2009.5164172
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.
引用
收藏
页码：52 / 55
页数：4
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