A 2DAnalytical Model of the Channel Potential and Threshold Voltage of Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile

被引：2
|
作者：
Tiwari, Pramod Kumar [1 ]
Kumar, Surendra [1 ]
Mittal, Samarth [1 ]
Srivastava, Vaibhav [1 ]
Pandey, Utkarsh [1 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Res Microelect, Varanasi 221005, Uttar Pradesh, India
来源：
2009 INTERNATIONAL CONFERENCE ON MULTIMEDIA, SIGNAL PROCESSING AND COMMUNICATION TECHNOLOGIES | 2009年
关键词：
SOI MOSFETS;
D O I：
10.1109/MSPCT.2009.5164172
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.
引用
收藏
页码：52 / 55
页数：4
相关论文
共 50 条
  • [31] A Global Continuous Channel Potential Solution for Double-Gate MOSFETs
    Liu, Feng
    He, Jin
    Zhang, Jian
    Chan, Mansun J.
    EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 156 - +
  • [32] Characteristics of vertical double-gate dual-strained-channel MOSFETs
    Yong, Gao
    Jing, Yang
    Yuan, Yang
    Jing, Liu
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (06)
  • [33] Characteristics of vertical double-gate dual-strained-channel MOSFETs
    高勇
    杨婧
    杨媛
    刘静
    半导体学报, 2009, 30 (06) : 51 - 56
  • [34] Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect
    Zhang, Lining
    Zhang, Jian
    Song, Yan
    Lin, Xinnan
    He, Jin
    Chan, Mansun
    MICROELECTRONICS RELIABILITY, 2010, 50 (08) : 1062 - 1070
  • [35] A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics
    Chiang, T. K.
    Chen, M. L.
    SOLID-STATE ELECTRONICS, 2007, 51 (03) : 387 - 393
  • [36] An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs
    Ding, Zhihao
    Hu, Guangxi
    Gu, Jinglun
    Liu, Ran
    Wang, Lingli
    Tang, Tingao
    MICROELECTRONICS JOURNAL, 2011, 42 (03) : 515 - 519
  • [37] Threshold Voltage Control through Layer Doping of Double Gate MOSFETs
    Joseph, Saji
    James, George T.
    Mathew, Vincent
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2010, 10 (03) : 240 - 250
  • [38] Threshold-voltage Modeling of double-gate MOSFETs by considering drain bias
    Choi, Byung-Kil
    Han, Kyoung-Rok
    Kim, Young Min
    Park, Ki-Heung
    Lee, Jong-Ho
    Roh, Tae Moon
    Kim, Jongdae
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 : S275 - S279
  • [39] Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs
    Trivedi, VP
    Fossum, JG
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) : 579 - 582
  • [40] Threshold Voltage Modeling of Short-Channel DG MOSFETs with Non-Uniform Doping in the Vertical Direction
    Kumar, Sanjay
    Goel, Ekta
    Rawat, Gopal
    Singh, Kunal
    Kumar, Mirgender
    Dubey, Sarvesh
    Jit, S.
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 263 - 266
12345