Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots

被引：10
|
作者：
Ooi, Poh Choon [1 ]
Li, Fushan [1 ]
Veeramalai, Chandrasekar Perumal [1 ]
Guo, Tailiang [1 ]
机构：
[1] Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 12期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; ELECTRICAL CHARACTERISTICS; SPACE-CHARGE; DISPLAYS; DEVICES; GRAPHENE; POLYMER; OXIDE; GATE;
D O I：
10.7567/JJAP.53.125001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, a transparent and flexible nonvolatile memory was fabricated using a solution process. The conduction mechanisms of the metal/insulator/metal structure consisting of cadmium selenide quantum dots embedded in poly(methylsilsesquioxane) dielectric layers were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and stable up to 1 x 10(4) s with little deterioration and a distinct ON/OFF ratio of 10(4). Endurance cycle and retention tests of the as-fabricated memory device were also carried out. The results indicate that the device has good operating stability. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Performance enhancement of nonvolatile memory by using a trapping layer of graphene oxide quantum dots
    Jia Xinlei
    Hong, Wang
    Li Xiaoyan
    Wang Jingjuan
    Tao, Yang
    Zhou Zhenyu
    Zhao Jianhui
    Chao, Lu
    Ron Deliang
    Yan Xiaobing
    MATERIALS RESEARCH EXPRESS, 2019, 6 (02)
  • [22] Functionalization of Cadmium Selenide Quantum Dots with Poly(ethylene glycol): Ligand Exchange, Surface Coverage, and Dispersion Stability
    Wenger, Whitney Nowak
    Bates, Frank S.
    Aydile, Eray S.
    LANGMUIR, 2017, 33 (33) : 8239 - 8245
  • [23] Thermo-Optical Characterization of Cadmium Selenide/Zinc Sulfide (CdSe/ZnS) Quantum Dots Embedded in Biocompatible Materials
    Pilla, Viviane
    Alves, Leandro P.
    Iwazaki, Adalberto N.
    Andrade, Acacio A.
    Antunes, Andrea
    Munin, Egberto
    APPLIED SPECTROSCOPY, 2013, 67 (09) : 997 - 1002
  • [24] Transparent non-volatile memory device using silicon quantum dots
    Park, Nae-Man
    Shin, Jaeheon
    Kim, Bosul
    Kim, Kyung Hyun
    Cheong, Woo-Seok
    ELECTRONIC MATERIALS LETTERS, 2013, 9 (04) : 467 - 469
  • [25] Transparent non-volatile memory device using silicon quantum dots
    Nae-Man Park
    Jaeheon Shin
    Bosul Kim
    Kyung Hyun Kim
    Woo-Seok Cheong
    Electronic Materials Letters, 2013, 9 : 467 - 469
  • [26] Detecting hydrogen sulfide by using transparent polymer with embedded CdSe/CdS quantum dots
    Xu, Huan
    Wu, Ji'en
    Chen, Chih-Hsin
    Zhang, Lianhui
    Yang, Kun-Lin
    SENSORS AND ACTUATORS B-CHEMICAL, 2010, 143 (02) : 535 - 538
  • [27] A transparent and flexible organic bistable memory device using parylene with embedded gold nanoparticles
    Aw, K. C.
    Ooi, P. C.
    Razak, K. A.
    Gao, W.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (08) : 3116 - 3125
  • [28] A transparent and flexible organic bistable memory device using parylene with embedded gold nanoparticles
    K. C. Aw
    P. C. Ooi
    K. A. Razak
    W. Gao
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 3116 - 3125
  • [29] Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications
    Lee, Jungmoo
    Kim, Ohyun
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
  • [30] Highly transparent and flexible supercapacitors using graphene-graphene quantum dots chelate
    Lee, Keunsik
    Lee, Hanleem
    Shin, Yonghun
    Yoon, Yeoheung
    Kim, Doyoung
    Lee, Hyoyoung
    NANO ENERGY, 2016, 26 : 746 - 754
12345