Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots

被引：10
|
作者：
Ooi, Poh Choon [1 ]
Li, Fushan [1 ]
Veeramalai, Chandrasekar Perumal [1 ]
Guo, Tailiang [1 ]
机构：
[1] Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 12期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; ELECTRICAL CHARACTERISTICS; SPACE-CHARGE; DISPLAYS; DEVICES; GRAPHENE; POLYMER; OXIDE; GATE;
D O I：
10.7567/JJAP.53.125001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, a transparent and flexible nonvolatile memory was fabricated using a solution process. The conduction mechanisms of the metal/insulator/metal structure consisting of cadmium selenide quantum dots embedded in poly(methylsilsesquioxane) dielectric layers were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and stable up to 1 x 10(4) s with little deterioration and a distinct ON/OFF ratio of 10(4). Endurance cycle and retention tests of the as-fabricated memory device were also carried out. The results indicate that the device has good operating stability. (C) 2014 The Japan Society of Applied Physics
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页数：4
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