Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots

被引：10

作者：

Ooi, Poh Choon ^{[1
]}

Li, Fushan ^{[1
]}

Veeramalai, Chandrasekar Perumal ^{[1
]}

Guo, Tailiang ^{[1
]}

机构：

[1] Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 12期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; ELECTRICAL CHARACTERISTICS; SPACE-CHARGE; DISPLAYS; DEVICES; GRAPHENE; POLYMER; OXIDE; GATE;

D O I：

10.7567/JJAP.53.125001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, a transparent and flexible nonvolatile memory was fabricated using a solution process. The conduction mechanisms of the metal/insulator/metal structure consisting of cadmium selenide quantum dots embedded in poly(methylsilsesquioxane) dielectric layers were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and stable up to 1 x 10(4) s with little deterioration and a distinct ON/OFF ratio of 10(4). Endurance cycle and retention tests of the as-fabricated memory device were also carried out. The results indicate that the device has good operating stability. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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