Transparent non-volatile memory device using silicon quantum dots

被引：6

作者：

Park, Nae-Man ^{[1
]}

Shin, Jaeheon ^{[1
]}

Kim, Bosul ^{[1
]}

Kim, Kyung Hyun ^{[1
]}

Cheong, Woo-Seok ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Lab, Taejon 305700, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2013年 / 9卷 / 04期

关键词：

transparent oxide semiconductor; non-volatile memory; silicon quantum dot; THIN-FILM-TRANSISTOR; STABILITY; NITRIDE; ZNO;

D O I：

10.1007/s13391-013-0028-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum dot film had a high optical transmittance of over 95% at 550 nm with a thickness of 50 nm. A large hysteresis curve was observed in a current-voltage measurement. When we increased the voltage sweep range, electrons were charged into the silicon quantum dots because of the electrical n-type channel in an oxide thin film transistor.

引用

页码：467 / 469

页数：3

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