Non-volatile memory based on silicon nanoclusters

Write/erase and charge retention characteristics of a memory element for the electrically programmable read-only memory based on the silicon/oxide_l/oxide_2/silicon_dot/oxide/semiconductor structure were simulated. An alternative high-κ dielectric (ZrO2) was used as a blocking oxide and the second tunnel oxide. A thin low-κ dielectric (SiO2) was used as the first tunneling oxide. Due to such a configuration, injection characteristics of tunneling SiO2 in the write/erase mode can be significantly improved; hence, the response rate and injected charge can be increased. At the same time, the use of the sufficiently thick blocking and second tunneling layers allows injected charge retention for a long time. Programming by a pulse 10 ms long with an amplitude of ±11 V makes it possible to obtain a memory window of ∼6 V in 10 years.