Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates

被引：11
|
作者：
Nakai, Y [1 ]
Nomura, I [1 ]
Takashima, Y [1 ]
Kikuchi, A [1 ]
Kishino, K [1 ]
机构：
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期
关键词：
D O I：
10.1002/pssa.200405106
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aging characteristics of BeZnSeTe II-VI yellow light emitting diodes (LEDs) fabricated on InP substrates by molecuar beam epitaxy were investigated under higher current injections from 130 to 900 A/cm(2) at room temperature. Light output decays during the aging are approximated using the decay model based on the carrier-recombination enhanced defect motion. Half lifetimes estimated from the approximations are compared with the literature data of ZnCdSe/MgZnSSe LEDs, which clearly indicates quite long lifetimes of the BeZnSeTe LEDs. In fact a long lifetime more than 2500 h was obtained at the injection current density of 130 A/cm(2) with no gradual decay except for the slight initial decay. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2708 / 2711
页数：4
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