Proposal of BeZnSeTe/MgZnCdSe II-VI compound semiconductors on InP substrates for green laser diodes

被引：0

作者：

Nomura, Ichirou ^{[1
]}

Kishino, Katsumi ^{[1
]}

Ebisawa, Tomoya ^{[1
]}

Kushida, Shun ^{[1
]}

Uota, Jun ^{[1
]}

Tasai, Kunihiko ^{[1
]}

Nakamura, Hitoshi ^{[1
]}

Asatsuma, Tsunenori ^{[1
]}

Nakajima, Hiroshi ^{[1
]}

机构：

[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan

来源：

2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：183 / 184

页数：2

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[1] Middle-range visible light emitting devices fabricated using BeZnSeTe/MgZnCdSe II-VI compounds on InP substrates
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