Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates

被引：12
|
作者：
Takashima, Y [1 ]
Nomura, I [1 ]
Nakai, Y [1 ]
Kikuchi, A [1 ]
Kishino, K [1 ]
机构：
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 03期
关键词：
D O I：
10.1002/pssb.200304160
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A novel BeZnSeTe quaternary has been proposed for active layers of II-VI visible light emitting devices on InP substrates. BeZnSeTe, which lattice parameters were matched to InP, were grown on InP substrates by molecular beam epitaxy (MBE). The Be composition was changed from 0.11 to 0.35. The photoluminescence (PL) spectra of these samples at 15 K showed single peak emissions with wavelengths from 487 to 506 mn without any deep level emission. From the reflectivity and PL spectra at 15 K, the Gamma-Gamma direct and Gamma-X indirect bandgaps of BeZnSeTe were evaluated, and it is shown that the crossover point from direct to indirect is around Be composition of 0.3. Applying the BeZnSeTe for the active layer, visible light emitting diodes (LEDs) were fabricated on InP substrates by MBE, resulting in yellow light single peak emissions around 575 mn at room temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：747 / 750
页数：4
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