Proposal of BeZnSeTe/MgZnCdSe II-VI compound semiconductors on InP substrates for green laser diodes

被引:0
|
作者
Nomura, Ichirou [1 ]
Kishino, Katsumi [1 ]
Ebisawa, Tomoya [1 ]
Kushida, Shun [1 ]
Uota, Jun [1 ]
Tasai, Kunihiko [1 ]
Nakamura, Hitoshi [1 ]
Asatsuma, Tsunenori [1 ]
Nakajima, Hiroshi [1 ]
机构
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:183 / 184
页数:2
相关论文
共 50 条
  • [41] Features of Nanotemplates Manufacturing on the II-VI Compound Substrates
    Colibaba, G. V.
    Monaico, E. V.
    Goncearenco, E. P.
    Inculet, I.
    Tiginyanu, I. M.
    [J]. 3RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING, 2016, 55 : 188 - 191
  • [42] CRYSTALLINE PHASES OF II-VI COMPOUND SEMICONDUCTORS GROWN BY PULSED-LASER DEPOSITION
    SHEN, WP
    KWOK, HS
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (17) : 2162 - 2164
  • [44] Atomic-Scale Characterization of II-VI Compound Semiconductors
    Smith, David J.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3168 - 3174
  • [45] Electrochemical atomic layer epitaxy of II-VI compound semiconductors
    Fan, Yuwei
    Li, Yongxiang
    Wu, Chongruo
    [J]. Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 1998, 18 (04): : 302 - 307
  • [46] AN ELECTROCHEMICAL STUDY OF CATHODIC DEPOSITION OF II-VI COMPOUND SEMICONDUCTORS
    TSENG, ES
    BASOL, BM
    KAPUR, VK
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C114 - C114
  • [47] ELECTRONIC SURFACE-STATES OF II-VI COMPOUND SEMICONDUCTORS
    TAKAHASHI, T
    EBINA, A
    [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 268 - 287
  • [48] POSITRON-ANNIHILATION IN II-VI COMPOUND SEMICONDUCTORS - THEORY
    PLAZAOLA, F
    SEITSONEN, AP
    PUSKA, MJ
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (42) : 8809 - 8827
  • [49] ATOMIC-LAYER EPITAXY OF II-VI COMPOUND SEMICONDUCTORS
    SITTER, H
    FASCHINGER, W
    [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1990, 30 : 219 - 237
  • [50] INTEGRATED HETEROSTRUCTURE DEVICES BASED ON II-VI COMPOUND SEMICONDUCTORS
    REN, J
    LANSARI, Y
    YU, Z
    COOK, JW
    SCHETZINA, JF
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 973 - 975