Green II-VI light emitting diodes with long lifetime on InP substrate

被引：51

作者：

Faschinger, W ^{[1
]}

Nürnberger, J ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97974 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.126919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that the quaternary compound ZnMgSeTe can be grown by molecular beam epitaxy in reasonable quality. For layers with energy gaps as high as 3.1 eV, nitrogen doping leads to free hole concentrations around 10(18) cm(-3). In combination with n-ZnMgCdSe, this material allows the fabrication of II-VI diodes lattice matched to InP substrate. Light emitting diodes containing a tensile strained ZnCdSe quantum well in ZnMgCdSe emit green light when operated in forward direction. In contrast to diodes with a comparable density of extended defects grown on GaAs substrate, these diodes show no formation of dark line defects and a lifetime which is about three orders of magnitude longer. (C) 2000 American Institute of Physics. [S0003-6951(00)05528-5].

引用

页码：187 / 189

页数：3

共 50 条

[1] Alternative materials for II-VI light emitting diodes and lasers
Landwehr, G
Waag, A
BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 17 - 22
[2] II-VI semiconductor color converters for efficient green, yellow, and red light emitting diodes
Haase, M. A.
Xie, J.
Ballen, T. A.
Zhang, J.
Hao, B.
Yang, Z. H.
Miller, T. J.
Sun, X.
Smith, T. L.
Leatherdale, C. A.
APPLIED PHYSICS LETTERS, 2010, 96 (23)
[3] A new approach to improved green emitting II-VI laser diodes
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Klude, M
Hommel, D
Itoh, S
Nakano, K
Ishibashi, A
2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, : 105 - 106
[4] Present status of blue/green-emitting II-VI laser diodes
Ishibashi, A
BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 113 - 118
[5] II-VI resonant cavity light emitting diodes for the mid-infrared
Bleuse, J
Hadji, E
Magnea, N
Pautrat, JL
MICROCAVITIES AND PHOTONIC BANDGAPS: PHYSICS AND APPLICATIONS, 1996, 324 : 353 - 362
[6] Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates
Nakai, Y
Nomura, I
Takashima, Y
Kikuchi, A
Kishino, K
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2708 - 2711
[7] Review of II-VI green laser diodes
Okuyama, H
IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (04) : 536 - 545
[8] Light-emitting II-VI nanostructures
Heuken, M
Kalisch, H
Hamade, H
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEW AND SHORT NOTES TO NANOMEETING '97, 1997, : 18 - 24
[9] SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES
WU, BJ
DEPUYDT, JM
HAUGEN, GM
HAASE, MA
ELECTRONICS LETTERS, 1995, 31 (12) : 1015 - 1016
[10] Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates
Che, SB
Nomura, I
Kikuchi, A
Kishino, K
APPLIED PHYSICS LETTERS, 2002, 81 (06) : 972 - 974

← 1 2 3 4 5 →