Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates

被引：11

作者：

Nakai, Y ^{[1
]}

Nomura, I ^{[1
]}

Takashima, Y ^{[1
]}

Kikuchi, A ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aging characteristics of BeZnSeTe II-VI yellow light emitting diodes (LEDs) fabricated on InP substrates by molecuar beam epitaxy were investigated under higher current injections from 130 to 900 A/cm(2) at room temperature. Light output decays during the aging are approximated using the decay model based on the carrier-recombination enhanced defect motion. Half lifetimes estimated from the approximations are compared with the literature data of ZnCdSe/MgZnSSe LEDs, which clearly indicates quite long lifetimes of the BeZnSeTe LEDs. In fact a long lifetime more than 2500 h was obtained at the injection current density of 130 A/cm(2) with no gradual decay except for the slight initial decay. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

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页码：2708 / 2711

页数：4

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