Light emitting diodes from MOVPE-grown p- and n-doped II-VI compounds

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Univ of Regensburg, Regensburg, Germany [1 ]
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J Cryst Growth | / 1-4卷 / 238-243期
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Annealing - Carrier concentration - Composition - Light emitting diodes - Luminescence - Metallorganic vapor phase epitaxy - Nitrogen - Semiconducting gallium arsenide - Semiconducting zinc compounds - Semiconductor device structures - Semiconductor doping - Substrates;
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