A method for the depth profiling of optically active states in ion-implanted silicon

A method is proposed for obtaining depth distribution profiles of optically active states created by ion implantation of semiconductors. The technique is based on the measurement of optical transmission spectra of the semiconductor in the course of layer-by-layer removal of the ion-implanted layer. The method is illustrated by the depth profiling of H+ ions in single-crystal silicon substrates implanted using ion bombardment regimes such that the transmission spectra of the samples contain clearly pronounced spectral bands due to the vibration of bonds of the type Si-H-n (n = 1, 2, 3) and exhibit transformation kinetics, for example, of ion dose accumulation. The technique is also applicable to the study of spatial distribution of the optically active states of impurities, defects, and various phases.