ION-IMPLANTED SILICON PROFILES IN GAAS

被引：29
|
作者：
LEE, DH [1 ]
MALBON, RM [1 ]
机构：
[1] HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
来源：
APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 07期
关键词：
D O I：
10.1063/1.89386
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：327 / 329
页数：3
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