DISPLACEMENT AND RECOIL IN ION-IMPLANTED SILICON

被引：9
|
作者：
MEDA, L [1 ]
CEROFOLINI, GF [1 ]
OTTAVIANI, G [1 ]
机构：
[1] UNIV MODENA, DEPT PHYS, I-41100 MODENA, ITALY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷
关键词：
D O I：
10.1016/S0168-583X(87)80089-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：454 / 456
页数：3
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