Analysis of Multi Chips Turn on Consistency in High Voltage and High Current IGBT Module

被引：0
|
作者：
Yao, Erxian [1 ]
Wang, Rui [1 ]
Liu, Xuguang [1 ]
Pan, Zhengwei [1 ]
Tong, Yan [1 ]
机构：
[1] Nari Geiri Semicond Co Ltd, Nanjing, Peoples R China
来源：
2020 IEEE 2ND INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS (ICCS 2020) | 2020年
关键词：
switching consistency; high power IGBT module; parasitic parameters;
D O I：
10.1109/ICCS51219.2020.9336600
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the influence of module internal structure, gap between and substrate, chip layout on multi chips turn on consistency are analyzed, taking the 3300V-1500A IGBT module as example. the copper foil area of the drive PCB should be expanded as much as possible, and the gate copper foil and the emitter copper foil should overlap as much as possible to offset the influence of the power side current change on the drive signal. On the chip layout, the difference between the gate path and the emitter path length should be minimized to improve the consistency of the driving signals of different chips. The gap between the drive PCB and the backing plate should be increased as much as possible to reduce the impact of the power side current change on the drive side.
引用
收藏
页码：105 / 109
页数：5
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