Investigation into the turn-off mechanism and time of IGBT based on voltage and current

被引:2
|
作者
Liu Bin-Li [1 ]
Liu De-Zhi [1 ]
Luo Yi-Fei [1 ]
Tang Yong [1 ]
Wang Bo [1 ]
机构
[1] Naval Univ Engn, Natl Key Lab Vessel Integrated Power Syst Technol, Wuhan 430033, Peoples R China
基金
中国国家自然科学基金;
关键词
turn-off mechanism; depletion layer; carrier; turn-off time;
D O I
10.7498/aps.62.057202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on semiconductor physics and the essential structure of IGBT, the turn-off mechanism of IGBT is deeply discussed regarding the problem of turn-off time changing with voltage and current. The laws of turn-off time changing with voltage and current are deduced, i.e., the turn-off time increases with voltage increasing and decreases with current increasing. The physical mechanisms of the laws are found out. The simulation results and experimental results, demonstrate that the derived and the existing law are constant, thereby proving the correctness of the derived law. It is put forward that the law of IGBT turn-off time changing with current and voltage accords with the complex law of exponent and hyperbola. For further studying the IGBT turn-off mechanism and solving the engineering puzzles including the power electronic dead time setting, the present study is significant in theory and practical application.
引用
收藏
页数:9
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